 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * DC - DC converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXM66P03N8TA ZXM66P03N8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 21 500 units 2500 units S S S D D D 3 DEVICE MARKING * ZXM 4 66P03 Top View ISSUE 1 - JANUARY 2006 1 SEMICONDUCTORS 5 6 7 8 ZXM66P03N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current V GS =-10V; T A =25C(b) V GS =-10V; T A =70C(b) V GS =-10V; T A =25C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -30 20 -7.9 -6.3 -6.25 -28 -4.1 -28 1.56 12.5 2.5 20 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 80 50 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. ISSUE 1 - JANUARY 2006 SEMICONDUCTORS 2 ZXM66P03N8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) V SD t rr Q rr 35 39.9 -0.95 V ns nC T j =25C, I S =-5.6A, V GS =0V T j =25C, I F =-5.6A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 7.6 16.3 94.6 39.6 36 62.5 4.9 19.6 ns ns ns ns nC nC nC nC V DS =-15V,V GS =-10V I D =-5.6A V DS =-15V,V GS =-5V I D =-5.6A V DD =-15V, I D =-5.6A R G =6.2, V GS =-10V C iss C oss C rss 1979 743 279 pF pF pF V DS =-25 V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 14.4 -1.0 -30 -1 -100 V A nA V 0.025 0.035 S I D =-250A, V GS =0V V DS =-24V, V GS =0V V GS =20V, V DS =0V I =-250A, V DS = D V GS V GS =-10V, I D =-5.6A V GS =-4.5V, I D =-2.8A V DS =-15V,I D =-5.6A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JANUARY 2006 3 SEMICONDUCTORS ZXM66P03N8 PACKAGE DIMENSIONS DIM Millimetres Min A B C D E F G J K L 4.80 Max 4.98 Inches Min 0.189 Max 0.196 1.27 BSC 0.53 REF 0.36 3.81 1.35 0.10 5.80 0 0.41 0.46 3.99 1.75 0.25 6.20 8 1.27 0.05 BSC 0.02 REF 0.014 0.15 0.05 0.004 0.23 0 0.016 0.018 0.157 0.07 0.010 0.24 8 0.050 (c) Zetex Semiconductors plc 2006 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - JANUARY 2006 SEMICONDUCTORS 4 |
Price & Availability of ZXM66P03N8TC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |